DocumentCode
1930996
Title
10 Gbit/s on-chip photodetection with self-aligned silicon bipolar transistors
Author
Popp, J. ; Philipsborn, H.v.
Author_Institution
SIEMENS AG, Corporate Research and Development, Munich, FRG
fYear
1990
fDate
10-13 Sept. 1990
Firstpage
571
Lastpage
574
Abstract
The photoresponse of a standard silicon high - speed self - aligned bipolar transistor was analysed. With a sensitivity of 3.2 A/W it is possible to detect modulated laser light up to data rates of 1.25 Gbit/s and by using the transistor in a photo diode mode data rates up to 10 Gbit/s are obtained.
Keywords
Bipolar transistors; High speed optical techniques; Laser modes; Optical pulses; Optical sensors; Photoconductivity; Research and development; Semiconductor diodes; Silicon; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location
Nottingham, England
Print_ISBN
0750300655
Type
conf
Filename
5436290
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