Title :
Influence of kink effect on the dynamic and noise performance of short-channel InAlAs/InGaAs HEMTs
Author :
Vasallo, B.G. ; Mateos, J. ; Pardo, D. ; González, T.
Author_Institution :
Departamento de Fisica Aplicada, Univ. de Salamanca, Spain
Abstract :
We perform a microscopic analysis of the degradation originated by the kink effect in the dynamic and noise performance of short-channel InAlAs/InGaAs lattice matched HEMTs by using a 2D ensemble Monte Carlo simulator. The onset of kink effect leads to a significant increase of the drain conductance, whose frequency dependence reflects the influence of the processes at the origin of the kink effect. Concerning the noise performance, the kink effect provokes an enhancement in the drain- and gate-current noise at low frequency, with a characteristic cutoff frequency related to the impact ionization rate and hole recombination time.
Keywords :
III-V semiconductors; Monte Carlo methods; aluminium compounds; gallium arsenide; high electron mobility transistors; impact ionisation; indium compounds; semiconductor device models; semiconductor device noise; 2D Monte Carlo simulator; InAlAs-InGaAs; drain conductance; drain-current noise; gate-current noise; high electron mobility transistor; hole recombination time; impact ionization rate; kink effect; microscopic analysis; noise performance; short-channel HEMT; Cutoff frequency; Degradation; HEMTs; Indium compounds; Indium gallium arsenide; Lattices; Low-frequency noise; MODFETs; Microscopy; Performance analysis;
Conference_Titel :
Electron Devices, 2005 Spanish Conference on
Print_ISBN :
0-7803-8810-0
DOI :
10.1109/SCED.2005.1504327
