DocumentCode :
1931073
Title :
Numerical modelling based comparison of the submicrometre III-V compounds MESFET´s performance
Author :
Ryzhii, V. ; Khrenov, G.
Author_Institution :
Institute of Physics and Technology USSR Academy of Sciences, Krasikov Str. 25a, Moscow, 117218 USSR
fYear :
1990
fDate :
10-13 Sept. 1990
Firstpage :
555
Lastpage :
557
Abstract :
Performances of submicrometer scaled-down MESFETs based on Ga0.47 In0.53As, InP and GaAs are investigated by Monte-Carlo two-dimensional numerical simulation method.
Keywords :
Electrons; Fabrication; Gallium arsenide; III-V semiconductor materials; Indium phosphide; MESFETs; Numerical models; Numerical simulation; Optical scattering; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
Print_ISBN :
0750300655
Type :
conf
Filename :
5436294
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1931073
بازگشت