Title :
Monolithic quantum tunnel diode-based C-band oscillator and LNA
Author :
Bergman, J.I. ; Han, Shuo ; Laskar, J. ; El-Zein, N. ; Ageno, S. ; Deshpande, M. ; Nair, V.
Author_Institution :
Microelectron. Res. Center, Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
We report on the design and microwave performance of a novel tunnel diode-based oscillator designed for 5 GHz in a monolithic IC technology. The fundamental output power of the oscillator is -18.8 dBm at 4.7 GHz, with second and third harmonic power levels at -43.2 dBm and -40.5 dBm, respectively. Phase noise of -87.0 dBc/Hz at 1 MHz was observed. While output power can be greatly increased by combining the tunnel diode with an integrated transistor, this design offers excellent compactness and low power consumption. In addition, an LNA design for 6 GHz in the same IC technology is presented.
Keywords :
MMIC amplifiers; MMIC oscillators; low-power electronics; tunnel diode amplifiers; tunnel diode oscillators; 5 GHz; 6 GHz; C-band oscillator; NDR HITD; low-noise amplifier; low-power operation; monolithic microwave IC technology; output power; phase noise; quantum tunnel diode; Diodes; Energy consumption; MMICs; Microwave integrated circuits; Microwave oscillators; Microwave technology; Monolithic integrated circuits; Phase noise; Power generation; Power system harmonics;
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6538-0
DOI :
10.1109/MWSYM.2001.967348
