Title :
Infrared temperature characterization of high power RF devices
Author :
Mahalingam, M. ; Mares, E.
Author_Institution :
Wireless Infrastruct. Syst. Div., Motorola Inc., Tempe, AZ, USA
Abstract :
Infrared microscopy measurement methodology has been refined to measure high power RF device temperatures accurately at high frequencies (1 GHz, 2+ GHz). Special difficulties due to translucent nature of Si are resolved. The methodology is applied to practical Si bipolar, Si LDMOS and GaAs RF power devices. Product thermal performance characterization method is established. Methodology is also applied in product development efforts.
Keywords :
UHF bipolar transistors; UHF field effect transistors; optical microscopy; power semiconductor devices; product development; semiconductor device reliability; semiconductor device testing; 1 to 2 GHz; GaAs; LDMOS; RF power devices; Si; bipolar; high power RF devices; infrared microscopy measurement methodology; infrared temperature characterization; product development efforts; thermal performance characterization method; translucent nature; Frequency measurement; Liquid crystal devices; Microscopy; Power measurement; Radio frequency; Semiconductor device measurement; Semiconductor device reliability; Semiconductor devices; Temperature measurement; Temperature sensors;
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6538-0
DOI :
10.1109/MWSYM.2001.967352
