• DocumentCode
    1931330
  • Title

    Simulation study of the origin of the 2DEG in isolated AlxGa1-xN/GaN heterostructures

  • Author

    Pérez, Juan Antonio Casao

  • Author_Institution
    Dpto. de Ingeniena Electronica y Comunicaciones, Centro Politecnico Superior., Zaragoza, Spain
  • fYear
    2005
  • fDate
    2-4 Feb. 2005
  • Firstpage
    155
  • Lastpage
    157
  • Abstract
    The significance of the surface states in isolated AlxGa1-xN/GaN heterostructures is investigated. A model based on a self-consistent solution of the Schrodinger, Poisson and charge balance equations is presented. The results obtained for the 2DEG density and the surface potential agree well with theoretical and experimental data already published (Jogai, 2002 and Smorchkova et al., 2001).
  • Keywords
    III-V semiconductors; Poisson equation; Schrodinger equation; aluminium compounds; gallium compounds; surface potential; surface states; two-dimensional electron gas; wide band gap semiconductors; 2DEG density; AlxGa1-xN/GaN heterostructures; AlGaN-GaN; Poisson equation; Schrodinger equation; charge balance equation; self-consistent solution; surface potential; surface states; Doping; Eigenvalues and eigenfunctions; Finite difference methods; Gallium nitride; Mathematical model; Matrix decomposition; Poisson equations; Potential well; Schrodinger equation; Wave functions;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices, 2005 Spanish Conference on
  • Print_ISBN
    0-7803-8810-0
  • Type

    conf

  • DOI
    10.1109/SCED.2005.1504339
  • Filename
    1504339
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1931330