DocumentCode :
1931330
Title :
Simulation study of the origin of the 2DEG in isolated AlxGa1-xN/GaN heterostructures
Author :
Pérez, Juan Antonio Casao
Author_Institution :
Dpto. de Ingeniena Electronica y Comunicaciones, Centro Politecnico Superior., Zaragoza, Spain
fYear :
2005
fDate :
2-4 Feb. 2005
Firstpage :
155
Lastpage :
157
Abstract :
The significance of the surface states in isolated AlxGa1-xN/GaN heterostructures is investigated. A model based on a self-consistent solution of the Schrodinger, Poisson and charge balance equations is presented. The results obtained for the 2DEG density and the surface potential agree well with theoretical and experimental data already published (Jogai, 2002 and Smorchkova et al., 2001).
Keywords :
III-V semiconductors; Poisson equation; Schrodinger equation; aluminium compounds; gallium compounds; surface potential; surface states; two-dimensional electron gas; wide band gap semiconductors; 2DEG density; AlxGa1-xN/GaN heterostructures; AlGaN-GaN; Poisson equation; Schrodinger equation; charge balance equation; self-consistent solution; surface potential; surface states; Doping; Eigenvalues and eigenfunctions; Finite difference methods; Gallium nitride; Mathematical model; Matrix decomposition; Poisson equations; Potential well; Schrodinger equation; Wave functions;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices, 2005 Spanish Conference on
Print_ISBN :
0-7803-8810-0
Type :
conf
DOI :
10.1109/SCED.2005.1504339
Filename :
1504339
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1931330
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