DocumentCode
1931418
Title
A Monte Carlo simulator including generation recombination processes
Author
Reggiani, Lino ; Kuhn, Tilmann ; Varani, Luca ; Gasquet, Daniel ; Vaissiere, Jean Claude ; Nougier, Jean Pierre
Author_Institution
Dipartimento di Fisica e Centro Interuniversitario di Struttura della Materia, Universita´´di Modena, Via Campi 213/A, 41100 Modena, Italy
fYear
1990
fDate
10-13 Sept. 1990
Firstpage
489
Lastpage
492
Abstract
We present an advanced Monte Carlo code (SIHOLE90) which is applied to p-Si and includes generation recombination processes from shallow impurity levels, impact ionization from neutral impurities and the Poole-Frenkel effect. The very good agreement obtained between calculations and experiments supports the physical reliability of the code which should provide useful information for device modeling.
Keywords
Conductivity; Electron mobility; Hot carriers; Impurities; Light scattering; Monte Carlo methods; Optical scattering; Radiative recombination; Reliability theory; Semiconductor device reliability;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location
Nottingham, England
Print_ISBN
0750300655
Type
conf
Filename
5436311
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