Title :
Pentacene organic thin-film transistors fabricated in a nonlithographic process
Author :
Voz, C. ; Puigdollers, J. ; Orpella, A. ; Martín, I. ; Vetter, M. ; Alcubilla, R.
Author_Institution :
Dept. Enginyeria Electronica, Univ. Politecnica Catalunya, Spain
Abstract :
Pentacene thin-film transistors using polymethil methacrylate as a gate dielectric have been fabricated. The maximum temperature throughout the whole process was 170 °C. The organic devices show satisfactory p-type electrical characteristics with on/off ratios exceeding 103 for VGS ranging from -30 to 30 V. The field-effect mobility and threshold voltage were around 0.01 cm2/V·s and -14 V respectively.
Keywords :
organic semiconductors; thin film transistors; -14 V; -30 to 30 V; 170 C; field-effect mobility; gate dielectric; nonlithographic process; organic devices; p-type electrical characteristics; pentacene organic thin-film transistors; polymethil methacrylate; threshold voltage; Crystallization; Dielectric substrates; Electric variables; Electrodes; Gold; Organic thin film transistors; Pentacene; Silicon; Temperature; Thin film transistors;
Conference_Titel :
Electron Devices, 2005 Spanish Conference on
Print_ISBN :
0-7803-8810-0
DOI :
10.1109/SCED.2005.1504344
