Title :
Nanocrystalline top-gate thin film transistors deposited at low temperature by hot-wire CVD on glass
Author :
Fonrodona, M. ; Escarré, J. ; Villar, F. ; Soler, D. ; Bertomeu, J. ; Andreu, J. ; Saboundji, A. ; Coulon, N. ; Mohammed-Brahim, T.
Author_Institution :
CeRMAE, Univ. de Barcelona, Spain
Abstract :
n and p-type nanocrystalline thin film transistors in coplanar top gate configuration have been processed at low temperature. All silicon layers (intrinsic, n and p-type) have been deposited by hot-wire chemical vapor deposition on glass substrates covered with SiO2. Gate insulation has been achieved by means of high quality sputtered SiO2. The maximum temperature reached during the whole process was 200°C. Very high field effect mobility has been obtained for both kinds of devices, with values of 22 cm V-1s-1 for the electron mobility and around 1.0 cm V-1s-1 for the hole mobility.
Keywords :
chemical vapour deposition; electron mobility; glass; hole mobility; nanostructured materials; silicon compounds; thin film transistors; 200 C; SiO2; chemical vapor deposition; coplanar top gate configuration; electron mobility; field effect mobility; glass substrates; hole mobility; hot-wire CVD; nanocrystalline thin film transistors; silicon layers; Active matrix liquid crystal displays; Chemical vapor deposition; Electron mobility; Glass; Nanobioscience; Personal digital assistants; Plasma temperature; Silicon; Substrates; Thin film transistors;
Conference_Titel :
Electron Devices, 2005 Spanish Conference on
Print_ISBN :
0-7803-8810-0
DOI :
10.1109/SCED.2005.1504350
