DocumentCode :
1931592
Title :
Numerical simulation of new InP/GaAsSb-DHBTs using ATLAS
Author :
Vicente, Lander Ortuzar San ; López-González, Juan M. ; Garcia-Loureiro, Antonio
Author_Institution :
Grup de Dispositius Semicond., Univ. Politecnica de Catalunya, Barcelona, Spain
fYear :
2005
fDate :
2-4 Feb. 2005
Firstpage :
187
Lastpage :
189
Abstract :
In this paper we study drift-diffusion and hydrodynamic carrier transport mechanisms for new InP/GaAsSb-DHBTs using commercial software ATLAS from Silvaco. Due to abrupt junction barriers in GaAsSb-based HBTs, hydrodynamic models could be necessary to understand device performance.
Keywords :
III-V semiconductors; carrier mobility; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device models; ATLAS; InP-GaAsSb; InP/GaAsSb-DHBT; drift diffusion; heterojunction bipolar transistor; hydrodynamic carrier transport; numerical simulation; Current density; Doping profiles; Double heterojunction bipolar transistors; Epitaxial layers; Frequency; Hydrodynamics; Indium gallium arsenide; Indium phosphide; Numerical simulation; Semiconductor process modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices, 2005 Spanish Conference on
Print_ISBN :
0-7803-8810-0
Type :
conf
DOI :
10.1109/SCED.2005.1504351
Filename :
1504351
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1931592
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