Title :
Radiation damage of 1.0 mm CMOS VLSI as a function of latchup immunity
Author :
Saitoh, Y. ; Akiba, T. ; Konishi, H. ; Watanabe, H. ; Nonaka, K. ; Kamiya, M. ; Tsuboyama, T. ; Miura, T.
Author_Institution :
SEIKO Instruments Inc., Torrance, CA, USA
Abstract :
The radiation damage of CMOS VLSI as a function of latchup immunity has been examined. Substantial effects of neutrons and electrons on IL (latchup current) have been found. There is an increase of IL with neutron and electron dosage. A nonnegligible restoration was observed after subsequent annealing. The increase of IL was found to be caused by degradation of IC (hFE). The degradation of I c was observed as a function of base width. The degradation of Ic was absorbed principally by volume recombination rather than surface recombination. There is no problem with the latchup immunity of CMOS VLSI due to irradiation. From the manufacturer´s point of view, this result suggests a way of improving latchup immunity for advanced CMOS VLSIs
Keywords :
CMOS integrated circuits; VLSI; electron beam effects; neutron effects; radiation effects; 1.0 mm; 1.0 mm CMOS VLSI; annealing; base width; degradation; electrons; latchup current; latchup immunity; neutrons; nonnegligible restoration; radiation damage; surface recombination; volume recombination; Annealing; CMOS technology; Degradation; Electrons; Fabrication; MOSFETs; Neutrons; Radiation effects; Radiative recombination; Very large scale integration;
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference, 1992., Conference Record of the 1992 IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-0884-0
DOI :
10.1109/NSSMIC.1992.301426
