Title :
Investigation of the type inversion phenomena: resistivity and carrier mobility in the space charge region and electrical neutral bulk neutron irradiated silicon p+-n junction detectors
Author :
Li, Zheng ; Eremin, V. ; Strokan, N. ; Verbitskaya, E.
Author_Institution :
Brookhaven Nat. Lab., Upton, NY, USA
Abstract :
The changes of both effective impurity concentration N eff and kinetics of charge collection in neutron-irradiated silicon p+-n junction detectors are studied in the range of neutron fluences φn=5×1011-6×10 13 n/cm2. High resistivity in the ENB suggests that, while the carrier mobilities in the SCR are affected little in the fluence range studied (<1×1014 n /cm2), the hole mobility in the ENB may be degraded significantly
Keywords :
carrier mobility; electrical conductivity of crystalline semiconductors and insulators; elemental semiconductors; neutron effects; semiconductor counters; silicon; ENB; SCR; Si; Si detectors; carrier mobility; charge collection; effective impurity concentration; electrical neutral bulk neutron irradiated silicon p+-n junction detectors; hole mobility; neutron fluences; resistivity; space charge region; type inversion phenomena; Conductivity; Detectors; Electrons; Laboratories; Neutrons; Semiconductor counters; Shape; Silicon; Space charge; Thyristors;
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference, 1992., Conference Record of the 1992 IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-0884-0
DOI :
10.1109/NSSMIC.1992.301430
