DocumentCode
1931702
Title
Identification and characterisation of noise sources in SIMOX MOSFETs
Author
Elewa, T. ; Boukriss, B. ; Haddara, H. ; Chovet, A. ; Crístoloveanu, S.
Author_Institution
Laboratoire de Physique des Composants Ã\xa0 Semiconducteurs (UA-CNRS), INPG, ENSERG, BP 257, 38016 Grenoble Cedex, France.
fYear
1990
fDate
10-13 Sept. 1990
Firstpage
441
Lastpage
444
Abstract
A simple model and an adequate experimental procedure are proposed for the separation of the noise sources related to the front interface, back interface and film volume. This allows the evaluation of the bulk defects and interface traps which are key parameters in the optimization of CMOS-SOI processes.
Keywords
Active noise reduction; Crystalline materials; Low-frequency noise; MOSFETs; Noise generators; Noise level; Semiconductor device noise; Semiconductor films; Silicon on insulator technology; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location
Nottingham, England
Print_ISBN
0750300655
Type
conf
Filename
5436323
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