Title :
Detection of near IR radiation by SiGe material
Author :
Sopko, B. ; Pavlu, J. ; Prochazka, I. ; Macha, I.
Author_Institution :
Czech Technical University, Faculty of Nuclear Science and Physical Engineering, Brehova 7, CS-115 19 Prague 1
Abstract :
We are reporting on the novel design of the fast photodiode for satellite laser ranging. The new technique, based on Germanium ion implantation into Si substrate, is used to increase the quantum efficiency for infra-red photons. The Single Photon Avalanche Diodes (SPADs) on ``pure´´ silicon are conventionally used for that purposes, but only very low quantum efficiency at the wavelength of 1 ¿m is obtained. Cur new advanced technology of the SPADs, allows an increase of the quantum efficiency at the wavelength of 1.07¿m by the factor 2-3.
Keywords :
Diodes; Germanium silicon alloys; Infrared detectors; Ion implantation; Optical design; Optical materials; Photodiodes; Radiation detectors; Satellites; Silicon germanium;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
