Title :
Optical characterisation of InGaAs/InP and InGaAs/InGaAsP MQW structures for optoelectronic applications
Author :
Wolter, K. ; Schwedler, R. ; Reinhardt, F. ; Kersting, R. ; Zhou, X Q. ; Grutzmacher, D. ; Kurz, H.
Author_Institution :
Institute of Semiconductor Electronics - Basislabor. RWTH Aachen. Sommerfeldstr., D-5100 Aachen. FRG
Abstract :
We performed CW and time resolved photoluminescence (PL) measurements on on a series of conventional InGaI/InP MQW structures grown by low pressure metal organic vapor phase epitaxy (LP-MOVPE). Variation of sample temperature allows to distinct between regions with different well widths in CW experinments. The relative sizes of areas vith different well widths are determined. In time resolved PL experiments the carrier capture from the barriers into the quantum wells has been investigated. An ambipolar capture time constant of 5 ± 2 ps is evaluated. Finally the optical gain of these structures is compared with InGaAs/ InP- and InGaAsP/InP-MQW-separate-confinement structures.
Keywords :
Epitaxial growth; Indium gallium arsenide; Indium phosphide; Performance evaluation; Phase measurement; Photoluminescence; Pressure measurement; Quantum well devices; Temperature; Time measurement;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
