Title :
BASIC II: a super self-aligned technology for high-performance bipolar applications
Author :
Pruijmboom, A. ; Jansen, A.C.L. ; Maas, H.G.R. ; Kranen, P.H. ; van Es, R.A. ; Dekker, R. ; van der Velden, J.W.A.
Author_Institution :
Philips Research Laboratories, P. O. Box 80.000, Eindhoven, The Netherlands.
Abstract :
A super selfaligned technology is described in this paper, resulting in a sidewall contacted structure. A strongly reduced sidewall base contact dimension of ca. 0.1 ¿m has been achieved by implementing a novel polysilicon planarisation technology. fT and fmax of 17 and 15 GHz have been measured for a BASIC-II npn transistor with a 1.5×58 ¿m2 emitter (at Vcb=2 V) which represents a 20-50% increase over conventional BASIC technology.
Keywords :
Boron; Capacitance measurement; Current measurement; Etching; Fluid flow measurement; Gain measurement; Laboratories; Measurement standards; Planarization; Transistors;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
