DocumentCode :
1931986
Title :
Fast scan cyclic voltammetry simulation for silicon nanoelectrodes
Author :
Avram, Marioara ; Angelescu, Anca ; Kleps, Irina ; Miu, Mihaela ; Popescu, Alina
Author_Institution :
Nat. Inst. for Res. & Dev. in Microtechnologies (IMT), Bucharest, Romania
Volume :
1
fYear :
2001
fDate :
2001
Firstpage :
43
Abstract :
A program based on four procedures, written in Borland-Pascal was applied for the simulations of fast scan cyclic voltammetry using as working electrode a metal/silicon pyramidal nanostructure array. The model for the electrode process includes diffusion (Fick´s law), electrode kinetics (Butler-Volmer equation), and chemical reaction kinetics
Keywords :
chemical potential; chemistry computing; electrochemical electrodes; electrochemical sensors; elemental semiconductors; nanotechnology; reaction kinetics; silicon; voltammetry (chemical analysis); Borland-Pascal; Butler-Volmer equation; Fick´s law; Nernst equation; Si; anodic potential limit; chemical reaction kinetics; current response; cyclic potential sweep; diffusion; electrochemical reaction mechanisms; electrode kinetics; fast scan cyclic voltammetry; forward sweep; mass transport; metal/silicon pyramidal nanostructure array; nanoelectrodes; oxidation; reduction; reverse sweep; simulation program; toxic metallic traces detection; voltammetry graphics; Analytical models; Chemical analysis; Chemical processes; Electrodes; Electrons; Equations; Kinetic theory; Research and development; Silicon; Surface treatment;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 2001. CAS 2001 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-6666-2
Type :
conf
DOI :
10.1109/SMICND.2001.967414
Filename :
967414
Link To Document :
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