Fast scan cyclic voltammetry simulation for silicon nanoelectrodes

Author

Avram, Marioara ; Angelescu, Anca ; Kleps, Irina ; Miu, Mihaela ; Popescu, Alina

Author_Institution

Nat. Inst. for Res. & Dev. in Microtechnologies (IMT), Bucharest, Romania

Volume

1

fYear

2001

fDate

2001

Firstpage

43

Abstract

A program based on four procedures, written in Borland-Pascal was applied for the simulations of fast scan cyclic voltammetry using as working electrode a metal/silicon pyramidal nanostructure array. The model for the electrode process includes diffusion (Fick´s law), electrode kinetics (Butler-Volmer equation), and chemical reaction kinetics

Keywords

chemical potential; chemistry computing; electrochemical electrodes; electrochemical sensors; elemental semiconductors; nanotechnology; reaction kinetics; silicon; voltammetry (chemical analysis); Borland-Pascal; Butler-Volmer equation; Fick´s law; Nernst equation; Si; anodic potential limit; chemical reaction kinetics; current response; cyclic potential sweep; diffusion; electrochemical reaction mechanisms; electrode kinetics; fast scan cyclic voltammetry; forward sweep; mass transport; metal/silicon pyramidal nanostructure array; nanoelectrodes; oxidation; reduction; reverse sweep; simulation program; toxic metallic traces detection; voltammetry graphics; Analytical models; Chemical analysis; Chemical processes; Electrodes; Electrons; Equations; Kinetic theory; Research and development; Silicon; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2001. CAS 2001 Proceedings. International

Conference_Location

Sinaia

Print_ISBN

0-7803-6666-2

Type

conf

DOI

10.1109/SMICND.2001.967414

Filename

967414