DocumentCode :
1932008
Title :
Silicon-based pseudo-heterojunction bipolar transistors
Author :
Shafi, Z A ; Ashburn, P.
Author_Institution :
Dept. of Electronics and Computer Science, The University, Southampton, SO9 5NH, England.
fYear :
1990
fDate :
10-13 Sept. 1990
Firstpage :
393
Lastpage :
396
Abstract :
The structure for a silicon pseudo-heterojunction device incorporating a low-doped emitter region is described. The emitter and base delay and current gain of these devices is calculated and compared to conventional devices. ECL propagation delays are also calculated, and predicted to be 21 ps, compared with 30 ps for the equivalent circuit incorporating conventional silicon devices. Finally, results from fabricated devices, are presented.
Keywords :
Bipolar transistors; Capacitance; Circuits; Delay effects; Doping profiles; Heterojunction bipolar transistors; Photonic band gap; Propagation delay; Silicon; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
Print_ISBN :
0750300655
Type :
conf
Filename :
5436335
Link To Document :
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