Title :
Internal structure of the nanosized sol-gel ITO thin films
Author :
Stoica, T.F. ; Teodorescu, V.S. ; Blanchin, M.G. ; Stoica, T.A. ; Gartner, M. ; Zaharescu, M.
Author_Institution :
Dept. de Phys. des Mater., Univ. Claude Bernard, Villeurbanne, France
Abstract :
The alkoxide route and the spinning deposition were used to prepare sol gel ITO films. The morphology and crystalline structure were investigated by Cross-section Transmission Electron Microscopy and Atomic Force Microscopy. The inside of the ITO layer has three regions of different porosity and the basic crystalline structure is that of the In2O3 lattice. Three types of surface morphological structures were found from AFM images
Keywords :
atomic force microscopy; indium compounds; nanostructured materials; porosity; semiconductor growth; semiconductor materials; semiconductor thin films; sol-gel processing; tin compounds; transmission electron microscopy; ITO; InSnO; alkoxide method; atomic force microscopy; cross-sectional transmission electron microscopy; crystalline structure; internal structure; nanosized ITO thin film; porosity; sol-gel synthesis; spinning deposition; surface morphology; Atomic force microscopy; Atomic layer deposition; Crystallization; Indium tin oxide; Lattices; Morphology; Nanostructures; Spinning; Transistors; Transmission electron microscopy;
Conference_Titel :
Semiconductor Conference, 2001. CAS 2001 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-6666-2
DOI :
10.1109/SMICND.2001.967417
