Electrical characteristics of a-SiGe:H/c-Si heterojunction diodes

Author

Cabré, R. ; Rosales-Quintero, P. ; Torres-Jacome, A. ; Hernández-Martinez, L. ; Murphy-Arteaga, R. ; De la Hidalga Wade, F.J. ; Marsa, L.F. ; Pallarès, J.

Author_Institution

Departament d´´Enginyeria Electronica, Electrica i Automatica, Univ. Rovira i Virgili, Avda, Spain

fYear

2005

fDate

2-4 Feb. 2005

Firstpage

271

Lastpage

274

Abstract

The dark current-voltage characteristics of a-SiGe:H/c-Si pn heterojunction diodes are fitted in the range of temperature of 295-381 K by the use of an electrical model. The conduction mechanisms are determined by analyzing the temperature dependence of the parameters obtained with the fitting. In particular, two diodes with 37 nm and 86 nm amorphous layer thickness are studied. The forward current-voltage characteristics are very similar in both diodes, but the increase in the amorphous layer thickness causes an increase in the leakage reverse current.

Keywords

Ge-Si alloys; amorphous semiconductors; leakage currents; semiconductor device models; semiconductor diodes; semiconductor heterojunctions; silicon; 295 to 381 K; 37 nm; 86 nm; Si; SiGe:H; amorphous layer thickness; conduction mechanisms; dark current-voltage characteristics; electrical model; leakage reverse current; pn heterojunction diodes; Amorphous materials; Boron; Current-voltage characteristics; Diodes; Electric variables; Heterojunctions; Optical films; Silicon; Space charge; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices, 2005 Spanish Conference on

Conference_Location

Tarragona

Print_ISBN

0-7803-8810-0

Type

conf

DOI

10.1109/SCED.2005.1504376

Filename

1504376