Title :
The application of a selective implanted collector to an advanced bipolar process
Author_Institution :
Plessey Research (Caswell) Ltd., Caswell, Towcester, Northants, NN12 8EQ
Abstract :
This report outlines a method to shallow an implanted base profile in a high speed bipolar process by selectively implanting phosphorus into the vicinity of the collector-base junction. The correct choice of implant conditions can give rise to reduced base width and increased cut-off frequency.
Keywords :
Auditory implants; Boron; Circuit optimization; Current measurement; Cutoff frequency; Doping; Frequency measurement; Helium; Silicon carbide; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
