Title :
The future of epitaxy
Author_Institution :
DIMES, Delft University of Technology, P.O. Box 5053, 2600 GB DELFT, the Netherlands
Abstract :
This paper reviews the present status and outlook for the epitaxy of III-V semiconductor structures. It focusses on the metalorganic approach and deals with MOCVD and MOMBE. After discussing some general features of these methods particular attention is given to the control of growth in the case of quantum well structures, selective deposition using dielectric masking and the development of new precursor materials.
Keywords :
Building materials; Composite materials; Elementary particle vacuum; Epitaxial growth; Hybrid junctions; Inorganic materials; Metallic superlattices; Molecular beam epitaxial growth; Organic materials; Semiconductor films;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
