DocumentCode
1932374
Title
The future of epitaxy
Author
Balk, P.
Author_Institution
DIMES, Delft University of Technology, P.O. Box 5053, 2600 GB DELFT, the Netherlands
fYear
1990
fDate
10-13 Sept. 1990
Firstpage
319
Lastpage
326
Abstract
This paper reviews the present status and outlook for the epitaxy of III-V semiconductor structures. It focusses on the metalorganic approach and deals with MOCVD and MOMBE. After discussing some general features of these methods particular attention is given to the control of growth in the case of quantum well structures, selective deposition using dielectric masking and the development of new precursor materials.
Keywords
Building materials; Composite materials; Elementary particle vacuum; Epitaxial growth; Hybrid junctions; Inorganic materials; Metallic superlattices; Molecular beam epitaxial growth; Organic materials; Semiconductor films;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location
Nottingham, England
Print_ISBN
0750300655
Type
conf
Filename
5436351
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