Title :
Photoluminescence of GeSi/Si (001) self-assembled islands with dome and hut shape
Author :
Shaleev, Mikhail V. ; Krasilnik, Zakhary F. ; Lobanov, Dmitriy N. ; Novikov, Alexey V. ; Vostokov, Nikolay V. ; Yablonsky, Artem N.
Author_Institution :
Inst. for Phys. of Microstructures, Acad. of Sci., Nizhny Novgorod, Russia
Abstract :
In this paper, we study the growth and photoluminescence (PL) spectra of GeSi/Si (001) self-assembled islands grown in a wide range (Tg=460°C+700°C) of Ge deposition temperatures. A structures with Ge hut islands with a height of <1 nm and a surface density of >2.0·1011 cm2 were grown. The blue-shift of the island related photoluminescence peak was observed during the island shape transition from dome to hut at Tg=580°C. The position of the island PL peak for structures grown at Tg≤ 550°C is slightly red-shifted with a decrease of Tg. This shift is associated with suppression of changes in the composition and height of islands with a lowering growth temperature of the Si cap layer.
Keywords :
Ge-Si alloys; elemental semiconductors; island structure; molecular beam epitaxial growth; nanostructured materials; photoluminescence; semiconductor materials; silicon; spectral line shift; 460 to 700 degC; 580 degC; GeSi-Si; GeSi/Si (001) self-assembled islands; Si cap layer; blue-shift; deposition temperatures; dome shapes islands; hut shaped islands; island composition; island height; island shape transition; nanoisland growth; photoluminescence peak; photoluminescence spectra; red-shift; solid source molecular beam epitaxial growth; surface density; Assembly; Atomic force microscopy; Germanium silicon alloys; Nanostructures; Photoluminescence; Self-assembly; Shape; Silicon germanium; Temperature dependence; Temperature distribution;
Conference_Titel :
Electron Devices and Materials, 2003. Proceedings. 4th Annual 2003 Siberian Russian Workshop on
Print_ISBN :
5-7782-0412-4
DOI :
10.1109/SREDM.2003.1224174
