Optimised and reliable drain structure for 0.5 μm n-channel devices

Hot carrier induced degradation and short channel effect control are the most serious constraints on 0.5 μm NMOS device design. First, characteristics and device lifetime of various drain structures were compared. Then simulations were performed to achieve the best compromise between these previous contraints and drive capability. Based on these simulations, improved drain structure was processed and tested. This new device has both high current and improved lifetime with a better short channel effect control, than previously ones.