Title :
Surface passivation layers for multicrystalline silicon solar cells
Author :
Ponce-Alcántara, S. ; Cañizo, C. Del ; Luque, A. ; Wright, Daniel N.
Author_Institution :
Inst. de Energia Solar, Univ. Politecnica de Madrid, Spain
Abstract :
Both silicon oxide and silicon nitride have the potential to efficiently passivate phosphorus emitters of silicon solar cells. A comparison of the two techniques is carried out in this work for multicrystalline substrates. Optimization of deposition conditions for silicon nitride by remote PECVD leads to very low surface recombination velocities under 200 cm/s.
Keywords :
amorphous semiconductors; passivation; plasma CVD; silicon; solar cells; surface recombination; PECVD; Si-SiN; Si-SiO/sub 2/; deposition optimization; multicrystalline silicon solar cells; multicrystalline substrates; silicon nitride; silicon oxide; surface passivation layers; surface recombination; Conductivity; Oxidation; Passivation; Photovoltaic cells; Plasma applications; Plasma temperature; Silicon compounds; Spontaneous emission; Substrates; Surface cleaning;
Conference_Titel :
Electron Devices, 2005 Spanish Conference on
Conference_Location :
Tarragona
Print_ISBN :
0-7803-8810-0
DOI :
10.1109/SCED.2005.1504384
