Title :
High frequency filters with semiconductor heterostructures
Author :
Niculescu, Ana ; Petrescu, Teodor
Abstract :
The transmission line analogy method is used to study the transfer function of the broad bandwidth filters obtained with GaAs-AlxGa1-xAs triangular barrier structures (TBSs) and multiple barrier structures. The FTS→FOB (lumped element high-pass to forbidden range) transition obtained by the change of the quantum well thickness in multiple barrier structures is analyzed. Also, the paper proposes a simple method for the design of the high-pass Cebisev I infrared range filter by utilizing 3D representations
Keywords :
Chebyshev filters; III-V semiconductors; aluminium compounds; gallium arsenide; high-pass filters; microwave filters; millimetre wave filters; quantum well devices; resonant tunnelling devices; semiconductor quantum wells; submillimetre wave devices; transfer functions; transmission line theory; FTS-FOB transition; GaAs-AlxGa1-xAs multiple barrier structures; GaAs-AlxGa1-xAs triangular barrier structures; GaAs-AlGaAs; broad bandwidth filters; filter resonant tunneling structures; high frequency filters; high-pass Cebisev infrared filters; lumped element high-pass to forbidden range transition; multiple barrier structures; quantum well thickness; semiconductor heterostructures; transfer function; transmission line analogy method; Bandwidth; Design methodology; Frequency; Quantum mechanics; Resonant tunneling devices; Schrodinger equation; Shape; Submillimeter wave filters; Transfer functions; Transmission lines;
Conference_Titel :
Semiconductor Conference, 2001. CAS 2001 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-6666-2
DOI :
10.1109/SMICND.2001.967432
