• DocumentCode
    1932461
  • Title

    UV photon and low-energy (5-150 eV) electron-stimulated processes at environmental interfaces

  • Author

    Orlando, T.M.

  • Author_Institution
    Environ. Molecular Sci. Lab., Pacific Northwest Nat. Lab., Richland, WA, USA
  • fYear
    1997
  • fDate
    19-22 May 1997
  • Firstpage
    310
  • Abstract
    Summary form only given. Irradiation of surfaces and interfaces with low-energy (5-150 eV) electrons and ultraviolet photons occurs during the storage of "mixed" (chemical/radioactive) waste forms and during processing steps which involve the use of low temperature plasmas. It is well known that electron- and photon-stimulated desorption (ESD and PSD) from wide band-gap materials and interfaces can be initiated by Auger decay of deep valence and shallow core holes. We present results on the ESD and PSD of environmentally relevant substrates such as ZrO/sub 2/(100), soda-glass, and NaNO/sub 3/. The major cation thresholds and yields indicate that ESD and PSD from these complex materials involves Auger stimulated events. In particular, desorption thresholds correlate with ionization of the O(2s), Zr(4p), Si(2p) and Na(2s) levels. The near band-gap threshold energy (/spl sim/5-7 eV) for the desorption of neutrals (i.e., atomic oxygen, NO, etc.) demonstrate the overall importance of self-trapped and localized excitons in both ESD and PSD of typical ceramics and oxides.
  • Keywords
    Auger effect; electron stimulated desorption; electron-surface impact; environmental factors; excitons; glass; photon stimulated desorption; plasma applications; plasma interactions; sodium compounds; zirconium compounds; 5 to 150 eV; Auger decay; Auger stimulated events; NaNO/sub 3/; ZrO/sub 2/; chemical waste; deep valence holes; desorption thresholds; electron-stimulated desorption; electron-stimulated processes; environmental interfaces; environmentally relevant substrates; interfaces; localized excitons; low temperature plasmas; low-energy electrons; major cation thresholds; near band-gap threshold energy; photon-stimulated desorption; processing steps; radioactive waste; self-trapped excitons; shallow core holes; soda-glass; surfaces; ultraviolet photons; waste storage; wide band-gap materials; yields; Chemical processes; Electrons; Electrostatic discharge; Excitons; Ionization; Photonic band gap; Plasma chemistry; Plasma materials processing; Plasma temperature; Radioactive materials;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Plasma Science, 1997. IEEE Conference Record - Abstracts., 1997 IEEE International Conference on
  • Conference_Location
    San Diego, CA, USA
  • ISSN
    0730-9244
  • Print_ISBN
    0-7803-3990-8
  • Type

    conf

  • DOI
    10.1109/PLASMA.1997.605140
  • Filename
    605140