DocumentCode
1932461
Title
UV photon and low-energy (5-150 eV) electron-stimulated processes at environmental interfaces
Author
Orlando, T.M.
Author_Institution
Environ. Molecular Sci. Lab., Pacific Northwest Nat. Lab., Richland, WA, USA
fYear
1997
fDate
19-22 May 1997
Firstpage
310
Abstract
Summary form only given. Irradiation of surfaces and interfaces with low-energy (5-150 eV) electrons and ultraviolet photons occurs during the storage of "mixed" (chemical/radioactive) waste forms and during processing steps which involve the use of low temperature plasmas. It is well known that electron- and photon-stimulated desorption (ESD and PSD) from wide band-gap materials and interfaces can be initiated by Auger decay of deep valence and shallow core holes. We present results on the ESD and PSD of environmentally relevant substrates such as ZrO/sub 2/(100), soda-glass, and NaNO/sub 3/. The major cation thresholds and yields indicate that ESD and PSD from these complex materials involves Auger stimulated events. In particular, desorption thresholds correlate with ionization of the O(2s), Zr(4p), Si(2p) and Na(2s) levels. The near band-gap threshold energy (/spl sim/5-7 eV) for the desorption of neutrals (i.e., atomic oxygen, NO, etc.) demonstrate the overall importance of self-trapped and localized excitons in both ESD and PSD of typical ceramics and oxides.
Keywords
Auger effect; electron stimulated desorption; electron-surface impact; environmental factors; excitons; glass; photon stimulated desorption; plasma applications; plasma interactions; sodium compounds; zirconium compounds; 5 to 150 eV; Auger decay; Auger stimulated events; NaNO/sub 3/; ZrO/sub 2/; chemical waste; deep valence holes; desorption thresholds; electron-stimulated desorption; electron-stimulated processes; environmental interfaces; environmentally relevant substrates; interfaces; localized excitons; low temperature plasmas; low-energy electrons; major cation thresholds; near band-gap threshold energy; photon-stimulated desorption; processing steps; radioactive waste; self-trapped excitons; shallow core holes; soda-glass; surfaces; ultraviolet photons; waste storage; wide band-gap materials; yields; Chemical processes; Electrons; Electrostatic discharge; Excitons; Ionization; Photonic band gap; Plasma chemistry; Plasma materials processing; Plasma temperature; Radioactive materials;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma Science, 1997. IEEE Conference Record - Abstracts., 1997 IEEE International Conference on
Conference_Location
San Diego, CA, USA
ISSN
0730-9244
Print_ISBN
0-7803-3990-8
Type
conf
DOI
10.1109/PLASMA.1997.605140
Filename
605140
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