DocumentCode
1932520
Title
Annealing of fixed oxide charge induced by hot-carrier stressing
Author
Brox, M. ; Weber, W.
Author_Institution
Siemens AG, Corporate Research and Development, Otto Hahn Ring 6, 8000 Mÿnchen 83, FRG
fYear
1990
fDate
10-13 Sept. 1990
Firstpage
295
Lastpage
298
Abstract
A study on electric-field-assisted annealing of transistor degradation has been performed on hot-carrier degraded n- and p-channel Si- MOSFETs. Distinct recovery is found following stressing conditions which lead to accumulation of fixed charge in the gate oxide. Agreement is obtained with previous studies on hole-detrapping following ionizing radiation. Results on p-MOSFETs support the view that very thin oxides are resistant to degradation.
Keywords
Annealing; Character generation; Charge carrier processes; Degradation; Electron traps; Hot carrier effects; Hot carriers; Lead compounds; MOSFET circuits; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location
Nottingham, England
Print_ISBN
0750300655
Type
conf
Filename
5436357
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