• DocumentCode
    1932533
  • Title

    About application of a spectral method for in situ of measurement of silicon etch rate in CCl2F2/O2 plasma

  • Author

    Bogomolov, Boris K. ; Sirota, Alexandr N.

  • Author_Institution
    Novosibirsk State Tech. Univ., Russia
  • fYear
    2003
  • fDate
    1-4 July 2003
  • Firstpage
    52
  • Lastpage
    53
  • Abstract
    The physical basis of a method of optical actinometry is considered. The preliminary outcome of research of a spectral emission type etching rate sensor are adduced. The linear dependence of etch rate of single-crystal silicon from the sensor current is obtained.
  • Keywords
    elemental semiconductors; radiometry; silicon; spectroscopy; sputter etching; CCl2F2/O2 plasma; Si; emission spectroscopy; in situ silicon etch rate measurement; low-temperature plasma etching; optical actinometry; sensor current etch rate linear dependence; single-crystal silicon; spectral emission type etching rate sensor; Atom optics; Etching; Optical films; Optical sensors; Plasma applications; Plasma density; Plasma measurements; Plasma temperature; Silicon; Stimulated emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Materials, 2003. Proceedings. 4th Annual 2003 Siberian Russian Workshop on
  • Print_ISBN
    5-7782-0412-4
  • Type

    conf

  • DOI
    10.1109/SREDM.2003.1224181
  • Filename
    1224181
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1932533