Title :
Experimental studies of microwave oscillator modules based on Si IMPATT diodes
Author :
Basanets, V.V. ; Boltovets, N.S. ; Zorenko, A.V. ; Belyaev, A.E. ; Konakova, R.V. ; Milenin, V.V. ; Voitsikhovskyi, D.I.
Author_Institution :
State Sci. & Res. Inst. "Orion", Kiev, Ukraine
Abstract :
We report our experimental results concerning the oscillator modules intended for the millimeter wavelength range (operating frequency of 30-39.5 GHz). They were fabricated. using silicon double-drift IMPATT diodes whose ohmic contacts involved antidiffusion layers based on TiNx interstitial phases. The output power of these modules is 10-50 mW
Keywords :
IMPATT oscillators; MIMIC; MMIC oscillators; elemental semiconductors; integrated circuit packaging; millimetre wave oscillators; modules; ohmic contacts; silicon; 10 to 50 mW; 30 to 39.5 GHz; EHF; MM-wave oscillator modules; MMIC topology; Si; Si IMPATT diodes; TiN; TiNx interstitial phases; antidiffusion layers; double-drift IMPATT diodes; millimeter wavelength range; miniature metal-ruby package; ohmic contacts; Electromagnetic heating; Frequency; MMICs; Metallization; Microwave devices; Microwave oscillators; Ohmic contacts; Semiconductor diodes; Silicon; Topology;
Conference_Titel :
Semiconductor Conference, 2001. CAS 2001 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-6666-2
DOI :
10.1109/SMICND.2001.967436
