• DocumentCode
    1932565
  • Title

    Molecular Beam Epitaxial GaAs/Al/sub 0.2/Ga/sub 0.8/As Heterojunction Bipolar Transistor on

  • Author

    Li, W.Q. ; Bhattacharya, P.

  • Author_Institution
    Department of Electrical Engineering and Computer Science, The University of Michigan
  • fYear
    1991
  • fDate
    17-19 June 1991
  • Keywords
    Capacitance-voltage characteristics; Doping profiles; Frequency; Gallium arsenide; Heterojunction bipolar transistors; III-V semiconductor materials; Microelectronics; Molecular beam epitaxial growth; Substrates; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 1991. 49th Annual
  • Conference_Location
    Boulder, CO, USA
  • Print_ISBN
    0-87942-647-0
  • Type

    conf

  • DOI
    10.1109/DRC.1991.664722
  • Filename
    664722
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1932565