DocumentCode :
1932576
Title :
Crystalline-based silicon light-emitting diode
Author :
Malik, Alexander ; Aceves, Mariano
Author_Institution :
Electron. Dept., INAOE, Puebla, Mexico
Volume :
1
fYear :
2001
fDate :
2001
Firstpage :
165
Abstract :
Room temperature electroluminescence from metal oxide-silicon structures with intermediate silicon oxide layer is observed. The tunnel-thin SiOx layer is grown by chemical oxidation. Electroluminescence is observed on forward biased diodes. The electric pumping was realized by applying series short rectangular current pulses. Significant emission occurs around 1.07 eV at room temperature. The physical reason for the electroluminescence is discussed
Keywords :
MIS devices; electroluminescence; elemental semiconductors; light emitting diodes; oxidation; silicon; tunnelling; 1.07 eV; chemical oxidation; crystalline silicon light-emitting diode; electric pumping; intermediate silicon oxide layer; metal-oxide-silicon structure; room temperature electroluminescence; tunneling; Chemicals; Crystallization; Electroluminescence; Heterojunctions; Light emitting diodes; Oxidation; Plasma temperature; Silicon; Spontaneous emission; Stimulated emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 2001. CAS 2001 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-6666-2
Type :
conf
DOI :
10.1109/SMICND.2001.967437
Filename :
967437
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1932576
بازگشت