DocumentCode :
1932588
Title :
A study of multiplication-induced breakdown in buried-channel p-MOSFFTs
Author :
Skotnicki, T. ; Merckel, G. ; Merrachi, A.
Author_Institution :
CNET-CNS; B.P. 98; 28, chemin du Vieux Chêne; 38243 Meylan; France.
fYear :
1990
fDate :
10-13 Sept. 1990
Firstpage :
269
Lastpage :
272
Abstract :
The multiplication-induced breakdown (MIB) in buried-channel (BC) P-MOSFETs is studied by means of numerical simulation, thus leading to a better comprehension of its physical mechanism. On this basis an analytical model is derived and verified according to measured breakdown characteristics. The very good accuracy of the model (error of the order of 5%) is demonstrated.
Keywords :
Electric breakdown;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
Print_ISBN :
0750300655
Type :
conf
Filename :
5436360
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1932588
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