Title :
The effect of carrier relaxation on quantum well laser threshold characteristics
Author :
Zegrya, G.G. ; Gunko, N.A. ; Kostko, I.A. ; Dogonkin, E.B.
Author_Institution :
A.F. Ioffe Phys. Tech. Inst., St. Petersburg, Russia
Abstract :
The effect of carrier-carrier relaxation and carrier-phonon relaxation on threshold characteristics of quantum well (QW) lasers is studied. Carrier relaxation time considerably depends on temperature, carrier density, and quantum well width. It is shown that in this case the gain coefficient becomes a more pronounced function of temperature and carrier density
Keywords :
carrier density; carrier relaxation time; laser theory; quantum well lasers; carrier density; carrier relaxation time; carrier-carrier relaxation; carrier-phonon relaxation; gain coefficient; quantum well laser; temperature dependence; threshold characteristics; Charge carrier density; Charge carrier processes; Energy states; Green function; Laser theory; Nonlinear optics; Quantum well lasers; Radiative recombination; Temperature dependence; Wave functions;
Conference_Titel :
Semiconductor Conference, 2001. CAS 2001 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-6666-2
DOI :
10.1109/SMICND.2001.967438
