DocumentCode
1932614
Title
Modeling of homoepitaxy on (100)-oriented surface of porous silicon layer
Author
Novikov, Pavel L. ; Sysenko, Tatyana Yu ; Zinoviev, Vladimir A.
Author_Institution
Inst. of Semicond. Phys., Novosibirsk, Russia
fYear
2003
fDate
1-4 July 2003
Firstpage
64
Lastpage
66
Abstract
Monte Carlo simulation was used for the study of the initial stage of Si on porous Si (PS) epitaxy. The fractal morphology of the PS layer was taking into account. The main changes during the homoepitaxy are shown to occur near the subsurface area of the porous layer and include the formation of a pendant layer over pores and a decrease in surface roughness.
Keywords
Monte Carlo methods; elemental semiconductors; epitaxial growth; fractals; porous semiconductors; silicon; surface morphology; surface roughness; (100)-oriented silicon; Monte Carlo simulation; Si; epitaxy; fractal morphology; homoepitaxy modeling; pendant layer formation; pores; porous layer subsurface area; porous silicon layer surface; surface morphology; surface roughness; thin film growth; Atomic layer deposition; Biomembranes; Computational modeling; Epitaxial growth; Fractals; Rough surfaces; Silicon; Surface morphology; Surface reconstruction; Surface roughness;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Materials, 2003. Proceedings. 4th Annual 2003 Siberian Russian Workshop on
Print_ISBN
5-7782-0412-4
Type
conf
DOI
10.1109/SREDM.2003.1224185
Filename
1224185
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