Title :
Study of the enhanced hot-electron injection in split-gate transistor structures
Author :
Van Houdt, J. ; Heremans, P. ; Witters, J.S. ; Groeseneken, Guido ; Maes, H.E.
Author_Institution :
IMEC v.z.w. - Kapeldreef 75 - B3030 Leuven - Belgium
Abstract :
When applying a high voltage to the floating gate of a split-gate device, enhanced hot-electron injection is observed. This phenomenon could be used for 5V-compatible EPROM or Flash EEPROM device operation. The gate current is proven to be equal to the total electron injection current. Charge-pumping measurements and simulations were performed in order to analyse the nature of the injection mechanism in this five-terminal transistor structure.
Keywords :
Charge measurement; Charge pumps; Current measurement; EPROM; Functional programming; Power generation; Power measurement; Secondary generated hot electron injection; Split gate flash memory cells; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
