Design and optimization of a MSM photodetector based on poly-Si layer

Author

Budianu, Elena ; Purica, Munizer ; Manea, Elena ; Danila, Mihai ; Gavrila, Raluca ; Oprea, Isabella

Author_Institution

Nat. Inst. for Res. & Dev. in Microtechnologies, Bucharest, Romania

Volume

1

fYear

2001

fDate

2001

Firstpage

181

Abstract

The photoresponse of the metal-semiconductor-metal photodiode (MSM-PD) is analyzed in dependence with structure geometry for optimization the operating speed and responsivity. The results were applied for an experimental MSM-PD structure made on thin film of polycrystalline silicon deposited by LPCVD on a substrate of silicon covered with a SiO₂ layer. Advantages of a high bandwidth in the GHz range, easy to fabricate and especially the compatible technological processes with Si VLSI technology make this type of photodetector one of the most attractive for optoelectronic integrated circuits

Keywords

CVD coatings; elemental semiconductors; metal-semiconductor-metal structures; photodetectors; photodiodes; silicon; MSM photodetector; Si-SiO₂; SiO₂ layer; design optimization; metal-semiconductor-metal photodiode; polysilicon LPCVD thin film; silicon substrate; Bandwidth; Design optimization; Geometry; Integrated circuit technology; Photodetectors; Photodiodes; Semiconductor thin films; Silicon; Sputtering; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2001. CAS 2001 Proceedings. International

Conference_Location

Sinaia

Print_ISBN

0-7803-6666-2

Type

conf

DOI

10.1109/SMICND.2001.967441

Filename

967441