Title :
A 0.13 µm SiGe BiCMOS technology for mm-wave mixed-signal applications
Author :
Rücker, Holger ; Heinemann, Bernd ; Mai, Andreas ; Tillack, Bernd
Author_Institution :
IHP, Frankfurt (Oder), Germany
Abstract :
We present a SiGe BiCMOS technology featuring high-speed HBTs with peak transit frequencies fT of 240 GHz and maximum oscillation frequencies fmax of 330 GHz at breakdown voltages of BVCEO = 1.7 V. The high-speed HBTs are integrated in a 0.13 mum RF CMOS process along with high-voltage HBTs (fT = 40 GHz, fmax = 120 GHz, BVCEO = 4.5 V) and a set of passive RF components. CML ring oscillator gate delays of 2.9 ps are demonstrated.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; millimetre wave integrated circuits; mixed analogue-digital integrated circuits; BiCMOS technology; CML ring oscillator gate delays; SiGe; frequency 240 GHz; frequency 330 GHz; high-speed HBT; maximum oscillation frequencies; mm-wave mixed-signal applications; peak transit frequencies; size 0.13 mum; voltage 1.7 V; BiCMOS integrated circuits; CMOS process; CMOS technology; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit technology; Millimeter wave technology; Radio frequency; Silicon germanium; Heterojunction bipolar transistors; Millimeter wave devices; Silicon alloys; Silicon bipolar/BiCMOS process technology;
Conference_Titel :
Mixed Design of Integrated Circuits & Systems, 2009. MIXDES '09. MIXDES-16th International Conference
Conference_Location :
Lodz
Print_ISBN :
978-1-4244-4798-5
Electronic_ISBN :
978-83-928756-1-1
