DocumentCode
1932772
Title
Improved Description of GAA (Gate-All-Around) MOSFET I-V Characteristics
Author
Jurczak, M. ; Jakubowski, A.
Author_Institution
IMiO, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland
fYear
1996
fDate
9-11 Sept. 1996
Firstpage
283
Lastpage
286
Abstract
A numerical model of GAA MOSFET has been derived to describe I-V characteristics. From a comparison of the model with the results of 2-D simulator MEDICI it is shown that the model predicts accurately the drain current from weak to strong inversion regions. Introducing the proposed surface potential model into the Francis et al. model [1], which is valid only in the subthreshold and near threshold regions, we extended its validity towards the strong inversion.
Keywords
Electrons; MOSFET circuits; Medical simulation; Numerical models; Poisson equations; Predictive models; Semiconductor films; Silicon; Transconductance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location
Bologna, Italy
Print_ISBN
286332196X
Type
conf
Filename
5436368
Link To Document