Title :
Numerical simulation of silicon flowmeters based on piezoresistance effect
Author :
Nazi, Alexander V. ; Gridchin, Viktor A.
Author_Institution :
Novosibirsk State Tech. Univ., Russia
Abstract :
The results of numerical simulation of the output characteristics of silicon integrated flowmeters, with the help of the program package ANSYS, are presented.
Keywords :
elemental semiconductors; finite element analysis; flowmeters; piezoresistive devices; silicon; FEM; Si; finite element method; integrated silicon flowmeters; numerical flowmeter simulation; piezoresistance effect; Bridge circuits; Etching; Gas detectors; Integrated circuit technology; Mechanical sensors; Numerical models; Numerical simulation; Piezoresistance; Silicon; Software packages;
Conference_Titel :
Electron Devices and Materials, 2003. Proceedings. 4th Annual 2003 Siberian Russian Workshop on
Print_ISBN :
5-7782-0412-4
DOI :
10.1109/SREDM.2003.1224192
