• DocumentCode
    1932827
  • Title

    A gigantic edge effect in etching: examination, model, and application

  • Author

    Yukecheva, Yulia S. ; Soots, R.A. ; Prinz, V. Ya

  • Author_Institution
    Inst. of Semicond. Phys., Novosibirsk, Russia
  • fYear
    2003
  • fDate
    1-4 July 2003
  • Firstpage
    88
  • Lastpage
    90
  • Abstract
    In the present work, a gigantic edge effect in etching of various materials in HF:HNO3:H2SO4 solution has been examined. An explanation for the processes underlying the effect is given. Based on the data obtained, a new method is proposed which permits one to precisely control the local etch depth we examine edge effect and give a model for the processes underlying it.
  • Keywords
    etching; hydrogen compounds; masks; H2SO4; HF; HF-HNO3-H2SO4 solution; HNO3; etching gigantic edge effect; etching processes; local etch depth control; masks; Etching; Fabrication; Gallium arsenide; Helium; Physics; Semiconductor materials; Shape control; Substrates; Temperature sensors; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Materials, 2003. Proceedings. 4th Annual 2003 Siberian Russian Workshop on
  • Print_ISBN
    5-7782-0412-4
  • Type

    conf

  • DOI
    10.1109/SREDM.2003.1224193
  • Filename
    1224193
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1932827