Title :
A gigantic edge effect in etching: examination, model, and application
Author :
Yukecheva, Yulia S. ; Soots, R.A. ; Prinz, V. Ya
Author_Institution :
Inst. of Semicond. Phys., Novosibirsk, Russia
Abstract :
In the present work, a gigantic edge effect in etching of various materials in HF:HNO3:H2SO4 solution has been examined. An explanation for the processes underlying the effect is given. Based on the data obtained, a new method is proposed which permits one to precisely control the local etch depth we examine edge effect and give a model for the processes underlying it.
Keywords :
etching; hydrogen compounds; masks; H2SO4; HF; HF-HNO3-H2SO4 solution; HNO3; etching gigantic edge effect; etching processes; local etch depth control; masks; Etching; Fabrication; Gallium arsenide; Helium; Physics; Semiconductor materials; Shape control; Substrates; Temperature sensors; Testing;
Conference_Titel :
Electron Devices and Materials, 2003. Proceedings. 4th Annual 2003 Siberian Russian Workshop on
Print_ISBN :
5-7782-0412-4
DOI :
10.1109/SREDM.2003.1224193
