3D parallel simulation of InP/InGaAs HBT

We have developed a numerical modeling to simulate abrupt heterojunction bipolar transistors (HBT) based on the finite element method (FEM) approach. We have implemented this formulation in a 3D parallel simulator and we have applied it to study InP/InGaAs HBT. For this type of transistors it is necessary to take into account that on both sides of the interface between the different regions of HBT devices there are materials with different properties. It implies the standard discretization methods, as FEM or finite differences, can not apply in the standard way. Using this model, the effects due to thermionic emission and the tunnel effect may take into account in a proper manner. We have applied domain decomposition methods to solve the associate linear systems. This code has been implemented for distributed memory multicomputers, making use of a message passing standard library, MPI.