An Efficient Numerical Approach to the Physics-Based Sensitivity Analysis of Bipolar Semiconductor Devices

An efficient numerical technique is presented to evaluate the DC sensitivity of electron devices through a two-carrier drift-diffusion numerical model. The method is based on an extension of the adjoint approach previously proposed by Ghione and Filicori. A short discussion of the technique is reported, together with some preliminary results concerning the behaviour of the distributed sensitivity within a two-implant, recessed-gate MESFET device.