DocumentCode
1932892
Title
Self-contained error-compensated N-valued memory for neural applications
Author
Pedroni, Volnei A.
Author_Institution
Dept. of Electr. Eng., California Inst. of Technol., Pasadena, CA, USA
fYear
1994
fDate
26-28 Sep 1994
Firstpage
152
Lastpage
155
Abstract
One of the main challenges faced in VLSI implementations of neural networks and other massively parallel analog signal processing systems is the long-term local storage of analog information. The author presents a self-contained multilevel memory which is capable of retaining an analog value indefinitely and has a built-in error control mechanism to give the system robustness against noise. The implementation requires small silicon area and the cells are modular to permit direct pile up
Keywords
VLSI; analogue storage; neural chips; VLSI implementations; analog information; error control mechanism; long-term local storage; massively parallel analog signal processing systems; multilevel memory; neural networks; self-contained error-compensated N-valued memory; Analog memory; Capacitors; Circuits; Clocks; Neural networks; Quantization; Silicon; Switches; Virtual colonoscopy; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics for Neural Networks and Fuzzy Systems, 1994., Proceedings of the Fourth International Conference on
Conference_Location
Turin
Print_ISBN
0-8186-6710-9
Type
conf
DOI
10.1109/ICMNN.1994.593244
Filename
593244
Link To Document