Influence of atom diffusion parameters on Ge nano-island orientation on Si(111) at initial nucleation stage

Author

Reizvikh, Irina A. ; Zverev, Alexey V. ; Teys, Sergey A. ; Yanovitskaya, Zoya Sh

Author_Institution

Novosibirsk State Tech. Univ., Russia

fYear

2003

fDate

1-4 July 2003

Firstpage

101

Lastpage

104

Abstract

The reasons for three-bilayer Ge nano-island nucleation on a Si(111) surface at low deposition rates, at the initial stages of wetting layer formation, were investigated. The simulation of Ge epitaxial growth on an atomically clean and flat Si(111) surface was carried out by a 3D Monte Carlo model. The influence of different diffusion parameters on island orientation was investigated. A new hypothesis, on the basis of simulations and literature analysis, provides an explanation for Ge-island height limitation by three-bilayer height at the initial nucleation stages on the Si(111) surface.

Keywords

Monte Carlo methods; diffusion; elemental semiconductors; epitaxial growth; germanium; island structure; nanostructured materials; nucleation; silicon; 3D Monte Carlo model; Ge nano-island orientation; Ge-Si; Si; atomic diffusion; atomically clean surface; deposition rate; epitaxial growth; flat Si(111) surface; initial nucleation; island height limitation; three-bilayer nano-islands; Atomic layer deposition; Bonding; Epitaxial growth; Monte Carlo methods; Nonhomogeneous media; Physics; Surface cleaning; Surface morphology; Surface reconstruction; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Materials, 2003. Proceedings. 4th Annual 2003 Siberian Russian Workshop on

Print_ISBN

5-7782-0412-4

Type

conf

DOI

10.1109/SREDM.2003.1224196

Filename

1224196