A simple model to analyze electron confinement and trapping in silicon nanodots

A procedure has been developed for analyzing charge confinement and trapping processes in silicon nanodots embedded in the oxide of a metal-oxide-semiconductor structure. The electron levels and envelope functions in both the 2DEG in the silicon substrate and the ODEG in the nanodot have been computed by self-consistently solving the Poisson and Schrodinger equations, including non-parabolicity corrections. The transfer probabilities between the two systems have been evaluated with the Bardeen formalism by adapting a procedure previously used in quantum-dot lasers.