DocumentCode
1932982
Title
Electron injection model for quantized systems: application to Monte Carlo simulation of nanometric MOSFETs
Author
Fernàndez-Díaz, Eduard ; Oriols, Xavier
Author_Institution
Dept. of Electr., Univ. Autonoma de Barcelona, Catalonia, Spain
fYear
2005
fDate
2-4 Feb. 2005
Firstpage
357
Lastpage
360
Abstract
This work presents a general model for the electron injection from contacts into a device active region. The model is developed for cases where the electrons are confined in one or several directions. The implementation of the approach within the semiconductor Monte Carlo technique is discussed. The present contact model can be applied for non-degenerate or degenerate statistics. As an example, we apply our method to a quantum well nano-MOSFET.
Keywords
MOSFET; Monte Carlo methods; nanoelectronics; quantum well devices; semiconductor device models; Monte Carlo simulation; contact model; electron injection model; nanometric MOSFET; non-degenerate/degenerate statistics; quantized systems; quantum well nano-MOSFET; Conductors; Contacts; Electronic mail; Electrons; MOSFETs; Nanoscale devices; Quantization; Reservoirs; Statistics; Wave functions;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices, 2005 Spanish Conference on
Conference_Location
Tarragona
Print_ISBN
0-7803-8810-0
Type
conf
DOI
10.1109/SCED.2005.1504403
Filename
1504403
Link To Document