Title :
Hole ionized impurity scattering in warped, non-parabolic and degenerate bands
Author :
Gómez-Campos, F.M. ; Rodríguez-Bolívar, S. ; Jiménez-Tejada, J.A. ; Carceller, J.E.
Author_Institution :
Dpto. Electronica y Tecnologia de los Computadores, Univ. de Granada, Spain
Abstract :
This work presents the ionized impurity scattering rates obtained within the framework of the B-H formalism, for a valence band model containing anisotropy, non-parabolicity and degeneracy, in order to study hole transport in doped semiconductors.
Keywords :
Monte Carlo methods; impurity scattering; ion implantation; semiconductor doping; valence bands; B-H formalism; degenerate bands; doped semiconductors; hole ionized impurity scattering; hole transport; non-parabolic bands; valence band model; warped bands; Anisotropic magnetoresistance; Effective mass; Germanium; III-V semiconductor materials; Monte Carlo methods; Probability; Scattering; Semiconductor impurities; Shape; Silicon;
Conference_Titel :
Electron Devices, 2005 Spanish Conference on
Conference_Location :
Tarragona
Print_ISBN :
0-7803-8810-0
DOI :
10.1109/SCED.2005.1504404
