DocumentCode
1933034
Title
Trends in Three-Dimensional Integration
Author
Akasaka, Yoichi
Author_Institution
Mitsubishi Electric Corp., LSI R&D Laboratory, 4-1 Mizuhara, Itami, 664, Japan
fYear
1987
fDate
14-17 Sept. 1987
Firstpage
265
Lastpage
273
Abstract
VLSI will be reaching to the limit of minimization in the 1990s, and after that, further increase of packing density or functions night depend on the vertical integration technology and wafer scale integration. The 3-D ICs consisting of completely stacked active layers offers the flexibility of circuit design and composition of various devices. Three-dimensional (3-D) integration is expected to provide several advantages, such as 1) parallel processing, 2) high-speed operation, 3) high packing density, and 4) multifunctional operation. This will lead upto new system design and the novel functional device. It will become a big trend for VLSI in the next generation.
Keywords
Capacitors; Insulation; Integrated circuit interconnections; Laboratories; Large scale integration; Parallel processing; Random access memory; Research and development; Three-dimensional integrated circuits; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location
Bologna, Italy
Print_ISBN
0444704779
Type
conf
Filename
5436382
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