Title :
Silicon light emitting devices in standard CMOS technology
Author :
Du Plessis, Monuko ; Aharoni, Herzl ; Snyman, Lukas W.
Author_Institution :
Carl & Emily Fuchs Inst. for Microelectron., Pretoria Univ., South Africa
Abstract :
Photon emission from reverse biased silicon pn junctions was reported for the first time in 1955. However, Si-LED´s will only find applications if they can be fully integrated with standard silicon integrated circuits, and several attempts have been made in this regard. This paper discusses the characteristics and design of silicon light emitting devices in standard CMOS technology with no process modifications
Keywords :
CMOS integrated circuits; elemental semiconductors; light emitting devices; silicon; CMOS technology; Si; Si-LED; photon emission; reverse biased silicon p-n junction; silicon integrated circuit; silicon light emitting device; Africa; Application software; Application specific integrated circuits; BiCMOS integrated circuits; CMOS process; CMOS technology; Integrated circuit technology; Potential well; Semiconductor superlattices; Silicon;
Conference_Titel :
Semiconductor Conference, 2001. CAS 2001 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-6666-2
DOI :
10.1109/SMICND.2001.967453
